Plessey to build LEDs in cubic GaN on Anvil Semiconductors’...

Plessey, Anvil Semiconductors and the University of Cambridge today announced that they are working together to fabricate high efficiency LEDs in cubic GaN grown on Anvil’s 3C-SiC / Si substrates. Cubic GaN has the potential to overcome the problems cause in conventional LEDs by the strong internal electric fields which impair carrier recombination and contribute […]
The post Plessey to build LEDs in cubic GaN on Anvil Semiconductors’ 3C-SiC/Si substrates to overcome Green Gap appeared first on Anvil Semiconductors.

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